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ADVANCE TECHNICAL INFORMATION
HiPerFASTTM IGBT with Diode
IXGB 75N60BD1
VCES IC25 VCE(sat) tfi
= = = =
600 V 120 A 2.3 V 150 ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 5
Maximum Ratings 600 600 20 30 120 75 300 ICM = 100 @ 0.8 VCES V V V V A A A A
PLUS 264
G
C
(TAB) E
G = Gate E = Emitter
C = Collector Tab = Collector
TC = 25C
360 -55 ... +150 150 -55 ... +150 10 300
W C C C g C
Features
* High current handling capability in * High frequency IGBT and antparallel * New generation HDMOSTM process * MOS Gate turn-on fordrive simplicity * Fast Recovery Epitaxial Diode (FRED)
with soft recovery and low IRM Applications FRED in one package holeless TO-264 package
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values (TJ = 25C unless otherwise specified) Min. Typ. Max. 600 2.5 TJ = 125C 5.5 650 5 100 2.3 V V A mA nA V
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 1 mA, VGE = 0 V = 500 A, VCE = VGE
* AC motor speed control * DC servo and robot drives * DC choppers * Uninterruptible power supplies (UPS) * Switch-mode and resonant-mode
power supplies Advantages
VCE = VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V Note1
* Space savings (two devices on one * Easy spring or clip mounting
package
(c) 2001 IXYS All rights reserved
98850 (8/01)
IXGB 75N60BD1
Symbol Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) Min. Typ. Max. 45 60 S PLUS 264 OUTLINE
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = 60A; VCE = 10 V, Note1
5300 VCE = 25 V, VGE = 0 V, f = 1 MHz 730 190 248 40 76 Inductive load, TJ = 25C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 5 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 5 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 62 57 220 150 3.3 63 70 5 330 270 6.0 400 270 6
pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.35 K/W K/W
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
0.19
Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions IF = 60A, V GE = 0 V, Note1
Characteristic Values (TJ = 25C unless otherwise specified) min. typ. max. TJ = 150C TJ = 25C 2 35 1.6 2.5 2.5 175 50 V V A ns ns
IF = IC90, VGE = 0 V, -diF/dt = 100 A/us VR = 100 V IF = 1 A; -di/dt = 200 A/ms; VR = 30 V
0.65 K/W
Notes: 1. Pulse test, t < 300s,duty cycle < 2%
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025

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